features l high sensitivity l uniform element sensitivity l low cross-talk l low noise applications l cd, dvd, mo (magneto-optical disc) signal pickups l laser beam alignment l various position detection applications photodiode si pin photodiode dual-element, plastic package photodiode S2721-02 , s3096-02 , s4204, s8703 S2721-02, s3096-02, s4204 and s8703 are dual-element si pin photodiodes molded into small plastic packages. having high sensiti vity and low noise, these photodiodes have very low cross-talk between the elements. custom devices (with different element shapes, number of elements, characteristics and packages) are also available to meet you specific needs. please feel free to contact our sales office. 1 general ratings / absolute maximum ratings absolute maximum ratings active area element g a p reverse voltage v r max. operating temperature topr storage temperature tstg type no. dimensional outline (mm) ( m) (v) (c) (c) S2721-02 ? 1 3 / 2 elements 5 s3096-02 ? 1.2 3 / 2 elements 30 s4204 ? s8703 ? 1 2 / 2 elements 20 20 -25 to +85 -40 to +100 electrical and optical characteristics (typ. ta=25 c, unless otherwise noted, per 1 element) dark current i d v r =10 v all elements spectral response range peak sensitivity wavelength p photo sensitivity = p temp. coefficient of i d t cid cut-off frequency fc v r =10 v r l =50 ? =780 nm -3 db terminal capacitance ct v r =10 v f=1 mhz nep v r =10 v type no. (nm) (nm) (a/w) typ. (na) max. (na) (times/c) (mhz) (pf) (w/hz 1/2 ) S2721-02 320 to 1060 900 0.56 0.1 2.0 50 6.4 10 -15 s3096-02 0.58 0.05 0.5 25 5 7.2 10 -15 s4204 s8703 320 to 1100 960 0.65 0.1 1.0 1.15 30 3 8.7 10 -15
si pin photodiode S2721-02, s3096-02, s4204, s8703 reverse voltage (v) terminal capacitance (typ. ta=25 ?c, f=1 mhz) 100 pf 1 pf 10 pf 0.1 1 10 100 S2721-02 s3096-02 s4204, s8703 reverse voltage (v) dark current (typ. ta=25 ? c) 100 pa 1 na 10 pa 1 pa 0.01 0.1 1 10 100 S2721-02 s3096-02 s4204, s8703 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 200 400 600 800 1000 wavelength (nm) photo sensitivity (a/w) (typ. ta=25 ? c) s4204, s8703 S2721-02 s3096-02 0 temperature coefficient (%/ ? c) 200 400 600 800 1000 wavelength (nm) +1.0 +0.5 (typ.) +1.5 -0.5 s3096-02, s4204 s8703 S2721-02 spectral response photo sensitivity temperature characteristics dark current vs. reverse voltage terminal capacitance vs. reverse voltage kmpdb0137eb kmpdb0134eb kmpdb0136eb kmpdb0135ec 2
si pin photodiode S2721-02, s3096-02, s4204, s8703 hamamatsu photonics k.k., solid state division 1126-1 ichino-cho, higashi-ku, hamamatsu city, 435-8558 japan, telephone: (81) 53-434-3311, fax: (81) 53-434-5184, http://www.hamamatsu.com u.s.a.: hamamatsu corporation: 360 foothill road, p.o.box 6910, bridgewater, n.j. 08807-0910, u.s.a., telephone: (1) 908-231-0 960, fax: (1) 908-231-1218 germany: hamamatsu photonics deutschland gmbh: arzbergerstr. 10, d-82211 herrsching am ammersee, germany, telephone: (49) 08152 -3750, fax: (49) 08152-2658 france: hamamatsu photonics france s.a.r.l.: 19, rue du saule trapu, parc du moulin de massy, 91882 massy cedex, france, t elephone: 33-(1) 69 53 71 00, fax: 33-(1) 69 53 71 10 united kingdom: hamamatsu photonics uk limited: 2 howard court, 10 tewin road, welwyn garden city, hertfordshire al7 1bw, unit ed kingdom, telephone: (44) 1707-294888, fax: (44) 1707-325777 north europe: hamamatsu photonics norden ab: smidesv ? gen 12, se-171 41 solna, sweden, telephone: (46) 8-509-031-00, fax: (46) 8-509-031-01 italy: hamamatsu photonics italia s.r.l.: strada della moia, 1/e, 20020 arese, (milano), italy, telephone: (39) 02-935-81-733, fax: (39) 02-935-81-741 information furnished by hamamatsu is believed to be reliable. however, no responsibility is assumed for possible inaccuracies or omissions. specifications are subject to change without notice. no patent rights are granted to any of the circuits described herein. ?200 3 hamamatsu photonics k.k. cat. no. kmpd1039e03 dec. 2003 dn shaded area indicates burr. chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? 1.8 0.5 10 ? 5 ? anode a cathode common anode b 5.0 max. 4.7 * 0.5 2.0 depth 0.15 max. active area photosensitive surface 5.0 max. 4.7 * 4.8 * 10 ? 5 ? (including burr) (including burr) 4.2 0.2 (including burr) (0.8) (1.25) 4.0 * 4.9 0.25 0.4 1.27 1.27 0.8 0.25 details of photodiode 0.02 2.0 1.0 b a 4.6 0.2 (including burr) active area chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? 0.7 0.5 2.54 (0.8) (1.0) 5.0 0.4 4.5 * (1.0) (0.8) 5.0 0.4 14.5 0.3 photosensitive surface 5 ? 0.25 3 ? 0.7 1.0 2.0 5.6 0.2 (including burr) 5.4 * 3 ? 10 ? details of photodiode 3.0 0.005 1.0 5.5 * ab anode a cathode common anode b cathode common active area 4.1 0.2 (including burr) 0.02 2.0 2.54 (0.8) (1.25) 4.9 0.4 4.0 * (1.25) (0.8) 13.8 0.3 4.9 0.4 5 ? 0.25 10 ? 0.5 0.8 1.8 5.0 0.2 (including burr) 4.7 * 4.8 * 5 ? 10 ? details of photodiode 1.0 0.6 0.5 photosensitive surface a b chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? anode a cathode common anode b cathode common active area 4.1 0.2 (including burr) 0.5 2.54 5.2 0.2 4.0 * 0.8 0.25 4.5 0.3 photosensitive surface 5 ? 10 ? 5.0 0.2 (including burr) 4.8 * 4.7 * details of photodiode 3.0 1.2 0.03 7.5 ? 5 ? 1.8 0.6 0.5 a b 10 ? 5 ? chip position accuracy with respect to the package dimensions marked * x, y 0.2 2 ? anode a cathode common anode b cathode common kmpda0118ea dimensional outlines (unit: mm, tolerance unless otherwise noted: 0.1) kmpda0119ea kmpda0120ea S2721-02 s4204 s3096-02 kmpda0181ea s8703 3
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